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合金法實現ZnO的P型轉化

時間:2024-06-22 08:43:39 網絡工程畢業論文 我要投稿
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合金法實現ZnO的P型轉化

全部作者: 張景文 王洪波 侯洵 第1作者單位: 西安交通大學 論文摘要: ZnO films were grown on Sapphire and n-type Silicon, and then deposited a gold film in some areas. After heat treatments in the air through gold alloy technics, they were employed to some electrical measurements. After treatment at the temperature of 850°C, ZnO, grown on sapphire and under gold layer, displayed super high resistivity. It seemed that the ZnO, grown on n-Si and under gold layer, displayed p-type conductivity, for diode-like I-V rectifying characteristics were observed between it and n-Si, and the ZnO layer, which was not deposited gold film. During the course of I-V characteristics measurement, the sample, grown on the n-Si and post treated at 750°C, appeared overflow twice, and then was observed stable rectifying characteristic. But the sample post treated at 650°C and lower temperature, was not observed rectifying characteristic. Farther experiment researches require to carried out. 關鍵詞: ZnO films, p-type Conversion, Gold Alloy (瀏覽全文) 發表日期: 2006年11月29日 同行評議:

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